FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerPair™
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
title:
SIZF360DT-T1-GE3
Vgs(th) (Max) @ Id:
2.2V @ 250µA
edacadModel:
SIZF360DT-T1-GE3 Models
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
edacadModelUrl:
/en/models/11310772
Configuration:
2 N-Channel (Dual), Schottky
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 15V, 3150pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V, 62nC @ 10V
Supplier Device Package:
6-PowerPair™
Packaging:
Tape & Reel (TR)
Power - Max:
3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF360
ECCN:
EAR99
