Dual N-Channel 30 V (D-S) MOSFET with Sc
Product Information
Maximum Continuous Drain Current:
40 (Channnel 1) A, 60 (Channel 2) A
Transistor Material:
Si
Width:
6mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
PowerPAIR 6 x 5
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
26.6 W, 60 W
Series:
TrenchFET
Maximum Gate Source Voltage:
+16 V, +20 V, -12 V, -16 V
Height:
0.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 250µA, 2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V, 95nC @ 10V
RoHS Status:
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 40A (Tc)
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 15V, 4320pF @ 15V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
8-PowerPair® (6x5)
Power - Max:
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIZF916
ECCN:
EAR99
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This is Dual N-Channel 30 V (D-S) MOSFET with Sc manufactured by Vishay Siliconix. The manufacturer part number is SIZF916DT-T1-GE3. While 40 (channnel 1) a, 60 (channel 2) a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6mm wide. It has a maximum of 30 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of powerpair 6 x 5. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14.6 (channel 1) nc @ 10 v, 62 (channel 2) nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 26.6 w, 60 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of +16 v, +20 v, -12 v, -16 v. In addition, the height is 0.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 6 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.4v @ 250µa, 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 4mohm @ 10a, 10v, 1.25mohm @ 10a, 10v. The maximum gate charge and given voltages include 22nc @ 10v, 95nc @ 10v. The product is rohs3 compliant. The continuous current drain at 25°C is 23a (ta), 40a (tc). The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1060pf @ 15v, 4320pf @ 15v. It has a long 14 weeks standard lead time. The product trenchfet® gen iv, is a highly preferred choice for users. 8-powerpair® (6x5) is the supplier device package value. The maximum power of the product is 3.4w (ta), 26.6w (tc), 4w (ta), 60w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sizf916, a base product number of the product. The product is designated with the ear99 code number.
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