Texas Instruments CSD87501LT
Product Information
Category:
Power MOSFET
Dimensions:
1.52 x 3.42 x 0.2mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
3.42mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
11 mΩ
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1620 pF
Length:
1.52mm
Pin Count:
10
Forward Transconductance:
48S
Typical Turn-Off Delay Time:
709 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
NexFET
Maximum Gate Source Voltage:
±20 V
Height:
0.2mm
Typical Turn-On Delay Time:
164 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-XFLGA
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD87501LT Models
Current - Continuous Drain (Id) @ 25°C:
-
edacadModelUrl:
/en/models/5125381
Configuration:
2 N-Channel (Dual) Common Drain
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
10-Picostar (3.37x1.47)
Power - Max:
2.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87501
ECCN:
EAR99
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Yes. We ship CSD87501LT Internationally to many countries around the world.
This is manufactured by Texas Instruments. The manufacturer part number is CSD87501LT. It is of power mosfet category . The given dimensions of the product include 1.52 x 3.42 x 0.2mm. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.42mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. It provides up to 11 mω maximum drain source resistance. The package is a sort of picostar. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1620 pf . Its accurate length is 1.52mm. It contains 10 pins. The forward transconductance is 48s . Whereas, its typical turn-off delay time is about 709 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.2mm. In addition, it has a typical 164 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 10-xflga. The maximum gate charge and given voltages include 40nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The product is available in 2 n-channel (dual) common drain configuration. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 10-picostar (3.37x1.47) is the supplier device package value. The maximum power of the product is 2.5w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd87501, a base product number of the product. The product is designated with the ear99 code number.
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