Texas Instruments CSD86330Q3D
Product Information
Dimensions:
3.4 x 3.4 x 1.5mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
3.3 mΩ, 8.8 mΩ
Package Type:
SON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.8 nC @ 4.5 v, 9.2 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
710 pF@ 12.5 V, 1280 pF@ 12.5 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
8.5 ns, 15.8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6 W
Series:
NexFET
Maximum Gate Source Voltage:
+8 V
Height:
1.5mm
Typical Turn-On Delay Time:
4.9 ns, 5.3 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
9.6mOhm @ 14A, 8V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
CSD86330Q3D Models
Current - Continuous Drain (Id) @ 25°C:
20A
edacadModelUrl:
/en/models/2533914
Configuration:
2 N-Channel (Half Bridge)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 12.5V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-LSON (3.3x3.3)
Power - Max:
6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD86330Q3
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD86330Q3D. The given dimensions of the product include 3.4 x 3.4 x 1.5mm. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers series transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. It provides up to 3.3 mω, 8.8 mω maximum drain source resistance. The package is a sort of son. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.9v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.8 nc @ 4.5 v, 9.2 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 710 pf@ 12.5 v, 1280 pf@ 12.5 v . Its accurate length is 3.4mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 8.5 ns, 15.8 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 6 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of +8 v. In addition, the height is 1.5mm. In addition, it has a typical 4.9 ns, 5.3 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerldfn. It has a maximum Rds On and voltage of 9.6mohm @ 14a, 8v. The maximum gate charge and given voltages include 6.2nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach affected. The continuous current drain at 25°C is 20a. The product is available in 2 n-channel (half bridge) configuration. It is shipped in tape & reel (tr) package . The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 920pf @ 12.5v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-lson (3.3x3.3) is the supplier device package value. The maximum power of the product is 6w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd86330q3, a base product number of the product. The product is designated with the ear99 code number.
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