Mounting Type:
Surface Mount
Peak Non-Repetitive Forward Surge Current:
280A
Maximum Forward Voltage Drop:
520mV
Diode Technology:
Schottky
Package Type:
TO-277
Number of Elements per Chip:
1
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
60V
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
FSV1060
Detailed Description:
Diode Schottky 60V 10A Surface Mount TO-277-3
Current - Reverse Leakage @ Vr:
220µA @ 60V
Operating Temperature - Junction:
-55°C ~ 150°C
Mounting Type:
Surface Mount
Voltage - DC Reverse (Vr) (Max):
60V
Capacitance @ Vr, F:
550pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If:
520mV @ 10A
Supplier Device Package:
TO-277-3
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
10A
Package / Case:
TO-277, 3-PowerDFN
Diode Type:
Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FSV1060V. The product is available in surface mount configuration. Moreover, a bespoke product has 280a peak non-repetitive forward surge current. It features 520mv of maximum forward voltage drop. The product utilizes schottky diode technology. The package is a sort of to-277. It consists of 1 elements per chip. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 60v. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: fsv1060. It features diode schottky 60v 10a surface mount to-277-3. 220µa @ 60v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 150°c. While it has maximum reverse voltage of 60v. Moreover, the product has a 550pf @ 4v, 1mhz capacitance. The product has a maximum forward voltage of 520mv @ 10a. to-277-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 10a of average rectified current. Moreover, the product comes in to-277, 3-powerdfn. It is designed with a schottky diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.
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