ON Semi 600V 16A, Dual Silicon Junction Diode, 3-Pin D2PAK MURB1660CTT4G
Product Information
Mounting Type:
Surface Mount
Peak Reverse Recovery Time:
60ns
Peak Non-Repetitive Forward Surge Current:
100A
Maximum Forward Voltage Drop:
1.5V
Maximum Continuous Forward Current:
16A
Diode Technology:
Silicon Junction
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Diode Type:
Silicon Junction
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
600V
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Diode Configuration:
1 Pair Common Cathode
Operating Temperature - Junction:
-65°C ~ 175°C
REACH Status:
REACH Unaffected
Reverse Recovery Time (trr):
60 ns
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 8 A
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
600 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
8A
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Surface Mount
Series:
SWITCHMODE™
Supplier Device Package:
D2PAK
Technology:
Standard
Base Product Number:
MURB1660
ECCN:
EAR99
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Yes. Our products in Diodes - Rectifiers - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semi 600V 16A, Dual Silicon Junction Diode, 3-Pin D2PAK MURB1660CTT4G. You can also check on our website or by contacting our customer support team for further order details on ON Semi 600V 16A, Dual Silicon Junction Diode, 3-Pin D2PAK MURB1660CTT4G.
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Yes. We ship MURB1660CTT4G Internationally to many countries around the world.
This is ON Semi 600V 16A Dual Silicon Junction Diode 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is MURB1660CTT4G. The product is available in surface mount configuration. Moreover, it has a peak reverse recovery time about 60ns . Moreover, a bespoke product has 100a peak non-repetitive forward surge current. It features 1.5v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 16a. The product utilizes silicon junction diode technology. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. It is designed with a silicon junction diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 600v. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from -65°c ~ 175°c. In addition, it is reach unaffected. It has a trr (reverse recovery time) of 60 ns. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 1.5 v @ 8 a. It is shipped in tape & reel (tr) package . While it has maximum reverse voltage of 600 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 8a. 10 µa @ 600 v is the reverse leakage value of a bespoke product. The product switchmode™, is a highly preferred choice for users. d2pak is the supplier device package value. This product use standard technology. Moreover, it corresponds to murb1660, a base product number of the product. The product is designated with the ear99 code number.
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