Mounting Type:
Surface Mount
Maximum Continuous Forward Current:
20A
Peak Non-Repetitive Forward Surge Current:
150A
Diode Technology:
Schottky
Package Type:
D2PAK
Number of Elements per Chip:
2
Pin Count:
3
Peak Reverse Repetitive Voltage:
100V
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
NTSB20
Detailed Description:
Diode Array Schottky 100V 10A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Reverse Leakage @ Vr:
17µA @ 70V
Operating Temperature - Junction:
-40°C ~ 150°C
Mounting Type:
Surface Mount
Diode Configuration:
Voltage - Forward (Vf) (Max) @ If:
830mV @ 10A
Supplier Device Package:
D2PAK-3
Packaging:
Cut Tape (CT)
Current - Average Rectified (Io) (per Diode):
10A
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
100V
Diode Type:
Schottky
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is NTSB20100CTT4G. The product is available in surface mount configuration. Furthermore, its maximum continuous forward current constitutes 20a. Moreover, a bespoke product has 150a peak non-repetitive forward surge current. The product utilizes schottky diode technology. The package is a sort of d2pak. It consists of 2 elements per chip. It contains 3 pins. While having the peak reverse repetitive 100v. It has typical 15 weeks of manufacturer standard lead time. Base Part Number: ntsb20. It features diode array schottky 100v 10a surface mount to-263-3, d²pak (2 leads + tab), to-263ab. 17µa @ 70v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -40°c ~ 150°c. The product has a maximum forward voltage of 830mv @ 10a. d2pak-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The average rectified current at per diode is 10a. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. While it has maximum reverse voltage of 100v. It is designed with a schottky diode. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The on semiconductor's product offers user-desired applications.
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