Mounting Type:
Through Hole
Rectifier Type:
Schottky Diode
Peak Non-Repetitive Forward Surge Current:
650A
Maximum Continuous Forward Current:
20A
Diode Technology:
SiC Schottky
Package Type:
TO-247
Number of Elements per Chip:
2
Diode Type:
SiC Schottky
Pin Count:
3
Peak Reverse Repetitive Voltage:
650V
Reverse Recovery Time (trr):
0 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-247-3
edacadModel:
FFSH2065BDN-F085 Models
Operating Temperature - Junction:
-55°C ~ 175°C
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/9169718
Speed:
No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Moisture Sensitivity Level (MSL):
Not Applicable
Qualification:
AEC-Q101
standardLeadTime:
15 Weeks
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-247-3
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
FFSH2065
ECCN:
EAR99
The ON Semiconductor FFSH2065BDN-F085 is a diode array designed for various power applications. Its fast recovery periods, reliable layout, and simplified circuit integration make it an excellent choice for different power conversion and switching applications, offering improved power efficiency and overall system performance. This diode array is produced with a 650 V voltage rating and is accommodated in a Through Hole TO-247-3 package, which offers robustness and efficient heat dissipation.
Prominent Benefits Offered By onsemi FFSH2065BDN-F085:
Application Information of onsemi FFSH2065BDN-F085:
Key Features of onsemi FFSH2065BDN-F085 Include:
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