ON Semiconductor NSBC114EDXV6T1G
Product Information
Base-Emitter Resistor:
10kΩ
Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Width:
1.3mm
Automotive Standard:
AEC-Q101
Maximum Continuous Collector Current:
100 mA
Package Type:
SOT-563
Number of Elements per Chip:
2
Configuration:
Dual
Maximum Operating Temperature:
+150 °C
Typical Input Resistor:
10 kΩ
Transistor Type:
NPN
Length:
1.7mm
Pin Count:
6
Minimum DC Current Gain:
35
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Voltage:
50 V dc
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
Typical Resistor Ratio:
1
Manufacturer Standard Lead Time:
17 Weeks
Base Part Number:
NSBC114
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10kOhms
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship NSBC114EDXV6T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSBC114EDXV6T1G. It has about 10kω base-emitter resistor . The given dimensions of the product include 1.7 x 1.3 x 0.6mm. The product has a maximum 0.25 v dc collector emitter saturation voltage . Furthermore, the product is 1.3mm wide. The product complies with automotive standard - aec-q101. The product has a maximum 100 ma continuous collector current . The package is a sort of sot-563. It consists of 2 elements per chip. The product is available in dual configuration. It has a maximum operating temperature of +150 °c. Whereas, it has a typical 10 kω input resistor . The transistor is a npn type. Its accurate length is 1.7mm. It contains 6 pins. It features up to 35 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. Whereas features a 50 v dc of collector emitter voltage (max). In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. In addition, it has a typical 1 resistor ratio . It has typical 17 weeks of manufacturer standard lead time. Base Part Number: nsbc114. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 500mw surface mount sot-563. Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. Resistor - Base - 10kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10kohms. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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