Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
100nA
Width:
1.4mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
300 mA
Package Type:
SOT-23 (TO-236
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Length:
3.04mm
Pin Count:
3
Minimum DC Current Gain:
20000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
30 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Current - Collector (Ic) (Max):
300 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
edacadModel:
MMBTA13LT1G Models
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919625
Transistor Type:
NPN - Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
225 mW
Base Product Number:
MMBTA13
ECCN:
EAR99
This is NPN Darlington Transistor 300 mA 30 V HFE:20000 3-Pin SOT-23 (TO-236 manufactured by onsemi. The manufacturer part number is MMBTA13LT1G. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum 100na collector cut-off current . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. The product has a maximum 300 ma continuous collector current . The package is a sort of sot-23 (to-236. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 30 v maximum collector base voltage. In addition, the product has a maximum 1.5 v base emitter saturation voltage . It features a 10 v of maximum emitter base voltage. Its accurate length is 3.04mm. It contains 3 pins. It features up to 20000 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). In addition, the height is 1.01mm. Whereas, the minimum operating temperature of the product is -55 °c. The maximum collector current includes 300 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 30 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 225 mw. Moreover, it corresponds to mmbta13, a base product number of the product. The product is designated with the ear99 code number.
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