Minimum DC Current Gain:
2000
Transistor Type:
NPN
Dimensions:
6.5 x 3.5 x 1.57mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
1 A
Maximum Collector Base Voltage:
90 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.9 V
Height:
1.57mm
Width:
3.5mm
Length:
6.5mm
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500µA, 500mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
10µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Power - Max:
800 mW
Base Product Number:
BSP52
ECCN:
EAR99
This is NPN Darlington Transistor 1 A 80 V HFE:2000 4-Pin SOT-223 manufactured by onsemi. The manufacturer part number is BSP52T1G. It features up to 2000 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.5 x 3.5 x 1.57mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 1 a continuous collector current . Additionally, it has 90 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). In addition, the product has a maximum 1.9 v base emitter saturation voltage . In addition, the height is 1.57mm. Furthermore, the product is 3.5mm wide. Its accurate length is 6.5mm. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 1.3 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 2000 @ 500ma, 10v is the minimum DC current gain at given voltage. The 1.3v @ 500µa, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 10µa is the maximum current at collector cutoff. sot-223 (to-261) is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to bsp52, a base product number of the product. The product is designated with the ear99 code number.
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