Dimensions:
6.73 x 2.38 x 6.35mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
20µA
Width:
2.38mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
2 A
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
6.73mm
Pin Count:
3
Minimum DC Current Gain:
1000
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
100 V
Height:
6.35mm
Minimum Operating Temperature:
-65 °C
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
edacadModel:
MJD112-1G Models
Frequency - Transition:
25MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919463
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Power - Max:
1.75 W
Base Product Number:
MJD112
ECCN:
EAR99
This is NPN Darlington Transistor 2 A 100 V HFE:1000 3-Pin IPAK (TO-251) manufactured by onsemi. The manufacturer part number is MJD112-1G. The given dimensions of the product include 6.73 x 2.38 x 6.35mm. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum 20µa collector cut-off current . Furthermore, the product is 2.38mm wide. The product offers single transistor configuration. The product has a maximum 2 a continuous collector current . The package is a sort of ipak (to-251). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 100 v maximum collector base voltage. In addition, the product has a maximum 4 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 6.73mm. It contains 3 pins. It features up to 1000 of minimum DC current gain. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. Whereas features a 100 v of collector emitter voltage (max). In addition, the height is 6.35mm. Whereas, the minimum operating temperature of the product is -65 °c. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Furthermore, 1000 @ 2a, 3v is the minimum DC current gain at given voltage. The transition frequency of the product is 25mhz. The 3v @ 40ma, 4a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 20µa is the maximum current at collector cutoff. i-pak is the supplier device package value. The maximum power of the product is 1.75 w. Moreover, it corresponds to mjd112, a base product number of the product. The product is designated with the ear99 code number.
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