Dimensions:
6.73 x 2.38 x 6.35mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
20µA
Width:
2.38mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
2 A
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
6.73mm
Pin Count:
3
Minimum DC Current Gain:
1000
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
100 V
Height:
6.35mm
Minimum Operating Temperature:
-65 °C
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
edacadModel:
MJD112-1G Models
Frequency - Transition:
25MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919463
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Power - Max:
1.75 W
Base Product Number:
MJD112
ECCN:
EAR99
