Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
21.08 (Dia.) x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Continuous Collector Current:
30 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
5 V
Height:
8.51mm
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
30 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-204AA, TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
edacadModel:
MJ11012G Models
Frequency - Transition:
4MHz
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1481709
Transistor Type:
NPN - Darlington
Package:
Tray
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
11 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Power - Max:
200 W
Base Product Number:
MJ11012
ECCN:
EAR99
This is Dual NPN Darlington Transistor 30 A 60 V HFE:200 2-Pin TO-204AA manufactured by onsemi. The manufacturer part number is MJ11012G. It features up to 200 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 21.08 (dia.) x 8.51mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product has a maximum 30 a continuous collector current . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 5 v base emitter saturation voltage . In addition, the height is 8.51mm. It features a 5 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. The maximum collector current includes 30 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204aa, to-3. Furthermore, 1000 @ 20a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 4v @ 300ma, 30a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 11 weeks standard lead time. In addition, 1ma is the maximum current at collector cutoff. to-204 (to-3) is the supplier device package value. The maximum power of the product is 200 w. Moreover, it corresponds to mj11012, a base product number of the product. The product is designated with the ear99 code number.
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