Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
0.02mA
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Frequency - Transition:
25MHz
title:
MJD112T4G
REACH Status:
REACH Unaffected
edacadModel:
MJD112T4G Models
edacadModelUrl:
/en/models/919464
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Power - Max:
20 W
Base Product Number:
MJD112
ECCN:
EAR99
