ON Semiconductor MJ11032G
Product Information
Minimum DC Current Gain:
400
Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Continuous Collector Current:
50 A
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Height:
8.51mm
Width:
26.67mm
Length:
38.86mm
Package Type:
TO-204
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
MJ11032
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 25A, 5V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 500mA, 50A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tray
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
300W
Customer Reference:
Package / Case:
TO-204AE
Current - Collector (Ic) (Max):
50A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MJ11032G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJ11032G. It features up to 400 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 38.86 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product has a maximum 50 a continuous collector current . Additionally, it has 120 v maximum collector base voltage. Whereas features a 120 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v base emitter saturation voltage . In addition, the height is 8.51mm. Furthermore, the product is 26.67mm wide. Its accurate length is 38.86mm. The package is a sort of to-204. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 3.5 v collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 21 weeks of manufacturer standard lead time. Base Part Number: mj11032. It features bipolar (bjt) transistor npn - darlington 120v 50a 300w through hole to-204 (to-3). Furthermore, 1000 @ 25a, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 3.5v @ 500ma, 50a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, tray is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 300w. Moreover, the product comes in to-204ae. The maximum collector current includes 50a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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