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Manufacturer : ON Semiconductor
Manufacturer Part No : MJ11012G
Enrgtech Part No : ET10002251
Product Range : PolySwitch RXEF Series

ON Semiconductor MJ11012G

TRANS NPN DARL 60V 30A TO-3

Product Information

Manufacturer Standard Lead Time : 2 Weeks
Base Part Number : MJ110
Detailed Description : Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 20A, 5V
Transistor Type : NPN - Darlington
Frequency - Transition : 4MHz
Mounting Type : Through Hole
Vce Saturation (Max) @ Ib, Ic : 4V @ 300mA, 30A
Part Status : Active
Supplier Device Package : TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max) : 60V
Packaging : Tray
Operating Temperature : -55°C ~ 200°C (TJ)
Power - Max : 200W
Package / Case : TO-204AA, TO-3
Current - Collector (Ic) (Max) : 30A
Current - Collector Cutoff (Max) : 1mA
Manufacturer : ON Semiconductor
Minimum DC Current Gain : 200
Transistor Type : NPN
Dimensions : 21.08 (Dia.) x 8.51mm
Mounting Type : Through Hole
Maximum Power Dissipation : 200 W
Maximum Continuous Collector Current : 30 A
Maximum Collector Base Voltage : 60 V
Maximum Collector Emitter Voltage : 60 V
Maximum Base Emitter Saturation Voltage : 5 V
Height : 8.51mm
Maximum Emitter Base Voltage : 5 V
Package Type : TO-204AA
Number of Elements per Chip : 2
Minimum Operating Temperature : -55 °C
Maximum Collector Emitter Saturation Voltage : 4 V
Maximum Operating Temperature : +200 °C
Pin Count : 2
rohs : RoHS Certificate of Compliance
Transistor Configuration : Single

Technical Documents

  • MJ11012,15,16 (Datasheets)
  • Datasheet (Technical Reference)
  • ESD Control Selection Guide V1 (Technical Reference)

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