Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
21.08 (Dia.) x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Continuous Collector Current:
30 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
5 V
Height:
8.51mm
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJ11012
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 20A, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 300mA, 30A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tray
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJ11012G. It features up to 200 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 21.08 (dia.) x 8.51mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product has a maximum 30 a continuous collector current . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 5 v base emitter saturation voltage . In addition, the height is 8.51mm. It features a 5 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mj11012. It features bipolar (bjt) transistor npn - darlington 60v 30a 4mhz 200w through hole to-204 (to-3). Furthermore, 1000 @ 20a, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 4mhz. The 4v @ 300ma, 30a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tray is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 30a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.