Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

The Infineon BFS481H6327XTSA1 offers exceptional performance for UK-based RF and broadband applications. Housed in a compact SOT‑363 (6‑pin) surface‑mount package, this silicon transistor supports up to 12 V collector‑emitter voltage, 20 mA current, and dissipates 175 mW, reliably handling demanding power requirements. With a high transition frequency of 8 GHz and low noise characteristics (NF ≈ 0.9 dB at 900 MHz), it is perfect for low-noise amplifiers, RF drivers, and buffering stages.

Reasons You Should Buy the Infineon Dual NPN Transistor, 6-Pin SOT-363

You want compact, high-frequency performance without compromise, and this dual NPN BFS481H6327XTSA1 delivers. It combines dual transistor elements in one ultra‑small SOT‑363 package, offering space-saving integration and excellent RF traits. With low noise, high gain, and solid thermal handling, it is a UK‑friendly choice for engineers seeking efficient, reliable RF performance in tight PCB layouts.

Product Salient Features and Benefits

• Dual NPN transistors in one package: saves PCB space and simplifies design.
• High transition frequency (f_T ≈ 8 GHz): ideal for modern RF and broadband amplification.
• Low noise figure (~0.9 dB at 900 MHz): ensures precise signal amplification with minimal distortion.
• Robust voltage/current handling (12 V, 20 mA, 175 mW): supports diverse RF circuit requirements.
• Compact, surface‑mount SOT‑363 package: great for dense UK PCB layouts.

Wide Application Range

• Low-noise front-end amplifiers in telecom and wireless equipment
• RF buffer and driver stages in broadband systems
• VHF/UHF frequency pre-amplifiers and receivers
• Compact RF modules in IoT, telecom, or industrial applications
• Dual-channel amplifier designs requiring matched transistor pairs

For more information please check the datasheets.