ON Semi PN2907ATA PNP Transistor, 800 mA, 60 V, 3-Pin TO-92
Product Information
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
1.6 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
2.6 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
20nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
ECCN:
EAR99
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Yes. We ship PN2907ATA Internationally to many countries around the world.
This is ON Semi PNP Transistor 800 mA 60 V 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is PN2907ATA. The transistor is a pnp type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 1.6 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 2.6 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 800 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60 v. It is shipped in bulk package . In addition, 20na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. The product is designated with the ear99 code number.
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