ON Semiconductor MJE15035G
Product Information
Transistor Type:
PNP
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
350 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Collector Base Voltage:
350 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
29 Weeks
Base Part Number:
MJE15035
Detailed Description:
Bipolar (BJT) Transistor PNP 350V 4A 30MHz 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2A, 5V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship MJE15035G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJE15035G. The transistor is a pnp type. The given dimensions of the product include 9.28 x 10.28 x 4.82mm. The product is available in through hole configuration. Provides up to 50 w maximum power dissipation. Whereas features a 350 v of collector emitter voltage (max). It carries 30 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 a. Additionally, it has 350 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 29 weeks of manufacturer standard lead time. Base Part Number: mje15035. It features bipolar (bjt) transistor pnp 350v 4a 30mhz 2w through hole to-220ab. Furthermore, 10 @ 2a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 500mv @ 100ma, 1a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 4a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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