Transistor Type:
NPN
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.2 V dc
Maximum Collector Base Voltage:
120 V dc
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BSS64
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 100mA 60MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10mA, 1V
Transistor Type:
NPN
Frequency - Transition:
60MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
200mV @ 15mA, 50mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is BSS64LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 2.64 x 1.11mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum 0.2 v dc collector emitter saturation voltage . Additionally, it has 120 v dc maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It carries 20 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bss64. It features bipolar (bjt) transistor npn 80v 100ma 60mhz 225mw surface mount sot-23-3 (to-236). Furthermore, 20 @ 10ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 60mhz. The 200mv @ 15ma, 50ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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