Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Base Voltage:
400 V dc
Maximum Collector Emitter Voltage:
300 V
Maximum Operating Frequency:
2 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP48
Detailed Description:
Bipolar (BJT) Transistor NPN 300V 1A 10MHz 2W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is TIP48G. The transistor is a npn type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 1 v dc collector emitter saturation voltage . Additionally, it has 400 v dc maximum collector base voltage. Whereas features a 300 v of collector emitter voltage (max). It carries 2 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: tip48. It features bipolar (bjt) transistor npn 300v 1a 10mhz 2w through hole to-220. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 1v @ 200ma, 1a is the maximum Vce saturation. to-220 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 1a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.