Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
50 kHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
30 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N3771
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 30A 200kHz 150W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 15A, 4V
Transistor Type:
NPN
Frequency - Transition:
200kHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 6A, 30A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
30A
Current - Collector Cutoff (Max):
10mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N3771G. The transistor is a npn type. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. The product has a maximum 4 v collector emitter saturation voltage . Additionally, it has 50 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). It carries 50 khz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 30 a. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n3771. It features bipolar (bjt) transistor npn 40v 30a 200khz 150w through hole to-204 (to-3). Furthermore, 15 @ 15a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 200khz. The 4v @ 6a, 30a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 150w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 30a. In addition, 10ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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