Infineon BFP196WNH6327XTSA1 NPN RF Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-343

Infineon

Product Information

Maximum Emitter Base Voltage VEBO:
2V
Maximum Power Dissipation Pd:
700mW
Transistor Polarity:
NPN
Maximum Transition Frequency ft:
7.5GHz
Maximum Collector Base Voltage VCBO:
20V
Series:
BFP196WN
Maximum DC Collector Current Idc:
150mA
Pin Count:
4
Package Type:
SOT-343
Minimum DC Current Gain hFE:
70
Minimum Operating Temperature:
-55°C
Transistor Configuration:
Npn Silicon Planar Epitaxial Transistor
Standards/Approvals:
JEDEC47/20/22
Maximum Collector Emitter Voltage Vceo:
12V
Product Type:
RF Bipolar Transistor
Maximum Operating Temperature:
150°C
Automotive Standard:
No
Mount Type:
Surface
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This is NPN RF Bipolar Transistor 150 mA 12 V 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BFP196WNH6327XTSA1. The product bfp196wn, is a highly preferred choice for users. It contains 4 pins. The package is a sort of sot-343. Whereas, the minimum operating temperature of the product is -55°c. The product offers npn silicon planar epitaxial transistor transistor configuration. rf bipolar transistor is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 150°c. The product complies with automotive standard - no. It has a surface type mount .

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Datasheet - BFP196WNH6327XTSA1(Technical Reference)

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