onsemi MJD117-1G
Product Information
Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.25mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
-100 V
Maximum Emitter Base Voltage:
5 V dc
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
edacadModel:
MJD117-1G Models
Frequency - Transition:
25MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1481735
Transistor Type:
PNP - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Power - Max:
1.75 W
Base Product Number:
MJD117
ECCN:
EAR99
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FAQs
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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi MJD117-1G. You can also check on our website or by contacting our customer support team for further order details on onsemi MJD117-1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21558332 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21558332.
Yes. We ship MJD117-1G Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is MJD117-1G. The transistor is a pnp type. The given dimensions of the product include 6.73 x 6.22 x 2.25mm. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. Whereas features a -100 v of collector emitter voltage (max). It features a 5 v dc of maximum emitter base voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Furthermore, 1000 @ 2a, 3v is the minimum DC current gain at given voltage. The transition frequency of the product is 25mhz. The 3v @ 40ma, 4a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 20µa is the maximum current at collector cutoff. The product is available in through hole configuration. i-pak is the supplier device package value. The maximum power of the product is 1.75 w. Moreover, it corresponds to mjd117, a base product number of the product. The product is designated with the ear99 code number.
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