onsemi KSD2012GTU
Product Information
Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
10.16 x 2.54 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
edacadModel:
KSD2012GTU Models
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1052629
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
18 Weeks
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3
Power - Max:
25 W
Base Product Number:
KSD2012
ECCN:
EAR99
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FAQs
Yes. You can also search KSD2012GTU on website for other similar products.
We accept all major payment methods for all products including ET21525651. Please check your shopping cart at the time of order.
You can order onsemi brand products with KSD2012GTU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi KSD2012GTU. You can also check on our website or by contacting our customer support team for further order details on onsemi KSD2012GTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21525651 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21525651.
Yes. We ship KSD2012GTU Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is KSD2012GTU. It features up to 150 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.16 x 2.54 x 15.87mm. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It features a 7 v of maximum emitter base voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 150 @ 500ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 1v @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 18 weeks standard lead time. In addition, 100µa (icbo) is the maximum current at collector cutoff. to-220f-3 is the supplier device package value. The maximum power of the product is 25 w. Moreover, it corresponds to ksd2012, a base product number of the product. The product is designated with the ear99 code number.
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