onsemi KSA916YTA PNP Transistor, 800 mA, 120 V, 3-Pin TO-92
Product Information
Minimum DC Current Gain:
120
Transistor Type:
PNP
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Base Voltage:
-120 V
Maximum Collector Emitter Voltage:
-120 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
-800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
120 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Frequency - Transition:
120MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
8 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
900 mW
Base Product Number:
KSA916
ECCN:
EAR99
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Yes. We ship KSA916YTA Internationally to many countries around the world.
This is PNP Transistor 800 mA 120 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is KSA916YTA. It features up to 120 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 4.9 x 3.9 x 8mm. The product is available in through hole configuration. Provides up to 900 mw maximum power dissipation. Additionally, it has -120 v maximum collector base voltage. Whereas features a -120 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -800 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 120 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 1v @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in cut tape (ct) package . Its typical moisture sensitivity level is not applicable. It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 900 mw. Moreover, it corresponds to ksa916, a base product number of the product. The product is designated with the ear99 code number.
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