onsemi NZT660 PNP Transistor, 3 A, 60 V, 3 + Tab-Pin SOT-223

NZT660 onsemi  PNP Transistor, 3 A, 60 V, 3 + Tab-Pin SOT-223
NZT660
NZT660
onsemi

Product Information

Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.7mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
-60 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-223 (SC-73)
Number of Elements per Chip:
1
Maximum DC Collector Current:
-3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
edacadModel:
NZT660 Models
Frequency - Transition:
75MHz
Vce Saturation (Max) @ Ib, Ic:
550mV @ 300mA, 3A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1050774
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Power - Max:
2 W
Base Product Number:
NZT66
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 3 A 60 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is NZT660. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.7 x 3.7 x 1.7mm. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. Additionally, it has -80 v maximum collector base voltage. Whereas features a -60 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-223 (sc-73). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -3 a. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 100 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 75mhz. The 550mv @ 300ma, 3a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. sot-223-4 is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to nzt66, a base product number of the product. The product is designated with the ear99 code number.

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NZT660 / NZT660A, PNP Low Saturation Transistor Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Fab 02/Aug/2023(PCN Assembly/Origin)
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Marking Lay-out Implementation 07/Oct/2022(PCN Design/Specification)
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Marking Lay-out Implementation 17/Nov/2021(PCN Design/Specification)
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NZT660/NZT660A(Datasheets)
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Identification Change 07/Oct/2022(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of onsemi NZT660 PNP Transistor, 3 A, 60 V, 3 + Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on onsemi NZT660 PNP Transistor, 3 A, 60 V, 3 + Tab-Pin SOT-223.
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Yes. We ship NZT660 Internationally to many countries around the world.