Minimum DC Current Gain:
8, 15
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 9.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5A, 5V
Frequency - Transition:
4MHz
REACH Status:
REACH Unaffected
edacadModel:
FJP13009H2TU Models
edacadModelUrl:
/en/models/1054789
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
6 Weeks
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
100 W
Base Product Number:
FJP13009
ECCN:
EAR99
