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onsemi MUN5211DW1T1G Dual NPN Digital Transistor, 50 V, 6-Pin SOT-363

MUN5211DW1T1G onsemi  Dual NPN Digital Transistor, 50 V, 6-Pin SOT-363
MUN5211DW1T1G
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.9mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
10 kΩ
Resistor - Base (R1):
10kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
10kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
2 NPN - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
250mW
Base Product Number:
MUN5211
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual NPN Digital Transistor 50 V 6-Pin SOT-363 manufactured by onsemi. The manufacturer part number is MUN5211DW1T1G. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 1 resistor ratio . The product offers isolated transistor configuration. It has a maximum operating temperature of +150 °c. It contains 6 pins. Whereas, it has a typical 10 kω input resistor . Resistor - Base - 10kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 10kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 300µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 npn - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 9 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum power of the product is 250mw. Moreover, it corresponds to mun5211, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assembly 30/Jul/2020(PCN Assembly/Origin)
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MUN5211DW1, NSBC114EDxx(Datasheets)
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Copper Wire 08/Jun/2009(PCN Design/Specification)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You will get a confirmation email regarding your order of onsemi MUN5211DW1T1G Dual NPN Digital Transistor, 50 V, 6-Pin SOT-363. You can also check on our website or by contacting our customer support team for further order details on onsemi MUN5211DW1T1G Dual NPN Digital Transistor, 50 V, 6-Pin SOT-363.
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