Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
0.9 x 2 x 1.25mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
65V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
edacadModel:
BC846BDW1T1G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1475965
Transistor Type:
2 NPN (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
19 Weeks
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
380mW
Base Product Number:
BC846
ECCN:
EAR99
The BC846BDW1T1G from onsemi is a dual NPN (negative-positive-negative) transistor created for various electronic applications. With a current rating of 100 mA and a voltage tolerance of 65 V, this transistor delivers reliable performance in a tight 6-pin SOT-363 package. Its dual NPN configuration, high current rating, voltage forbearance, and compact package make it an excellent choice for amplification, switching, logic gates, and power control in various consumer and industrial devices.
Key Features of ON Semi BC846BDW1T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363 Include:
Versatile Uses of ON Semi BC846BDW1T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363:
What Benefits Are Offered By ON Semi BC846BDW1T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363?
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