Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
75 V
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
300 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
edacadModel:
PN2222ABU Models
Frequency - Transition:
300MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/6534
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
PN2222
ECCN:
EAR99
The PN2222ABU is a bipolar NPN through-hole transistor manufactured by Onsemi and is widely used in various electronic applications. This small signal transistor is designed to operate in the low power range and is known for its high gain and low noise characteristics. It is a low-voltage device that can handle a maximum voltage of 40 volts and a maximum current of 600 mA.
Product Characteristics:
The PN2222ABU transistor has high gain, low noise, and low voltage drop characteristics, which make it ideal for use in low-power circuits. The gain of this transistor is typically around 100, which means that the output current is approximately 100 times greater than the input current. This high gain makes it suitable for use in amplifiers.
Construction and Design:
The PN2222ABU transistor consists of a collector, base, and emitter region sandwiched between two layers of doped silicon material. The collector and emitter regions are heavily doped to enable a large amount of current to pass through them. The base region is very thin compared to the other two regions, and it controls the current flow between the emitter and collector.
Potential Applications of PN2222ABU:
Reviews
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