Infineon BFR181E6327HTSA1 NPN Transistor, 20 mA, 12 V, 3-Pin SOT-23

BFR181E6327HTSA1 Infineon  NPN Transistor, 20 mA, 12 V, 3-Pin SOT-23
BFR181E6327HTSA1
Infineon

Product Information

Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
175 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
12 V
Pin Count:
3
Maximum Emitter Base Voltage:
2 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
20 mA
Maximum Operating Temperature:
+150 °C
Transistor Configuration:
Single
RoHs Compliant
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This is NPN Transistor 20 mA 12 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BFR181E6327HTSA1. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 175 mw maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 12 v of collector emitter voltage (max). It contains 3 pins. It features a 2 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 20 ma. It has a maximum operating temperature of +150 °c. The product offers single transistor configuration.

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BFR181, NPN Silicon RF Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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