ON Semiconductor MJD45H11TF
Product Information
Transistor Type:
PNP
Dimensions:
6.6 x 6.1 x 2.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Collector Base Voltage:
-10 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJD45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 8A 40MHz 1.75W Surface Mount TO-252-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
TO-252-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
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Yes. We ship MJD45H11TF Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJD45H11TF. The transistor is a pnp type. The given dimensions of the product include 6.6 x 6.1 x 2.3mm. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. Whereas features a 80 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. Additionally, it has -10 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. Base Part Number: mjd45. It features bipolar (bjt) transistor pnp 80v 8a 40mhz 1.75w surface mount to-252-3. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 40mhz. The 1v @ 400ma, 8a is the maximum Vce saturation. to-252-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.75w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 8a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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