ON Semiconductor KSD1691YSTU
Product Information
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Collector Base Voltage:
60 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
42 Weeks
Base Part Number:
KSD1691
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 2A, 1V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.3W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship KSD1691YSTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSD1691YSTU. The transistor is a npn type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. Whereas features a 60 v of collector emitter voltage (max). It features a 7 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 5 a. Additionally, it has 60 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 42 weeks of manufacturer standard lead time. Base Part Number: ksd1691. It features bipolar (bjt) transistor npn 60v 5a 1.3w through hole to-126-3. Furthermore, 160 @ 2a, 1v is the minimum DC current gain at given voltage. The 300mv @ 200ma, 2a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.3w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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