Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
300 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
200 mA
Maximum Collector Base Voltage:
60 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
2N3904
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N3904TA. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). It carries 300 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 200 ma. Additionally, it has 60 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: 2n3904. It features bipolar (bjt) transistor npn 40v 200ma 300mhz 625mw through hole to-92-3. The transition frequency of the product is 300mhz. The 300mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 200ma. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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