Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
0.7 V
Maximum Collector Base Voltage:
10 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
50 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.8 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
Frequency - Transition:
100MHz
Voltage - Collector Emitter Breakdown (Max):
45 V
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
625 mW
ECCN:
EAR99
