Infineon SMBT2907A PNP Bipolar Transistor, 0.6 A, 60 V, 3-Pin SOT-23

SMBT2907AE6327 Infineon SMBT2907A PNP Bipolar Transistor, 0.6 A, 60 V, 3-Pin SOT-23
Infineon

Product Information

Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 mW
Maximum Collector Emitter Saturation Voltage:
1.6 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
2.6 V
Maximum Operating Frequency:
200 (Min.) MHz
Height:
0.9mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.6 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is SMBT2907A PNP Bipolar Transistor 0.6 A 60 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is SMBT2907AE6327. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 330 mw maximum power dissipation. The product has a maximum 1.6 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 2.6 v base emitter saturation voltage . It carries 200 (min.) mhz of maximum operating frequency. In addition, the height is 0.9mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.6 a. It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SMBT2907A, MMBT2907A PNP Silicon Switching Transistor Datasheet(Technical Reference)

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