Transistor Type:
NPN
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Voltage:
12 V
Maximum Operating Frequency:
1 GHz
Maximum Emitter Base Voltage:
2 V
Package Type:
CPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
150 mA
Maximum Collector Base Voltage:
20 V
Pin Count:
6
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Base Part Number:
CPH6003
Detailed Description:
RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH
Noise Figure (dB Typ @ f):
1.8dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
7GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
150mA
Customer Reference:
Supplier Device Package:
6-CPH
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Gain:
9dB
Package / Case:
SOT-23-6 Thin, TSOT-23-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 50mA, 5V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is CPH6003A-TL-E. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.6 x 0.9mm. The product is available in surface mount configuration. Provides up to 800 mw maximum power dissipation. Whereas features a 12 v of collector emitter voltage (max). It carries 1 ghz of maximum operating frequency. It features a 2 v of maximum emitter base voltage. The package is a sort of cph. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 150 ma. Additionally, it has 20 v maximum collector base voltage. It contains 6 pins. The product offers single transistor configuration. It has typical 22 weeks of manufacturer standard lead time. Base Part Number: cph6003. It features rf transistor npn 12v 150ma 7ghz 800mw surface mount 6-cph. It has given noise figure of 1.8db @ 1ghz at given frequency. The transition frequency of the product is 7ghz. The maximum collector current includes 150ma. 6-cph is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 12v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 800mw. The 9db is the gain value of a bespoke product. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Furthermore, 100 @ 50ma, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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