Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
10 kHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
50 V dc
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
44 Weeks
Base Part Number:
MUN5230
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
3 @ 5mA, 10V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
1kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 10mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
1kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MUN5230DW1T1G. The transistor is a npn type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 385 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It carries 10 khz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has 50 v dc maximum collector base voltage. It contains 6 pins. The product offers isolated transistor configuration. It has typical 44 weeks of manufacturer standard lead time. Base Part Number: mun5230. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mw surface mount sc-88/sc70-6/sot-363. Furthermore, 3 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. Resistor - Base - 1kohms. The 250mv @ 5ma, 10ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 1kohms. The maximum power of the product is 250mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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