ON Semiconductor 12A02MH-TL-E
Product Information
Transistor Type:
PNP
Dimensions:
2 x 1.6 x 0.85mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
600 mW
Maximum Collector Emitter Voltage:
12 V
Maximum Operating Frequency:
450 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Collector Base Voltage:
-15 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
40 Weeks
Base Part Number:
12A02
Detailed Description:
Bipolar (BJT) Transistor PNP 12V 1A 450MHz 600mW Surface Mount 3-MCPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 10mA, 2V
Transistor Type:
PNP
Frequency - Transition:
450MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
240mV @ 20mA, 400mA
Supplier Device Package:
3-MCPH
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
600mW
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. We ship 12A02MH-TL-E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 12A02MH-TL-E. The transistor is a pnp type. The given dimensions of the product include 2 x 1.6 x 0.85mm. The product is available in surface mount configuration. Provides up to 600 mw maximum power dissipation. Whereas features a 12 v of collector emitter voltage (max). It carries 450 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of mcph. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. Additionally, it has -15 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 40 weeks of manufacturer standard lead time. Base Part Number: 12a02. It features bipolar (bjt) transistor pnp 12v 1a 450mhz 600mw surface mount 3-mcph. Furthermore, 300 @ 10ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 450mhz. The 240mv @ 20ma, 400ma is the maximum Vce saturation. 3-mcph is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 12v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 600mw. Moreover, the product comes in 3-smd, flat lead. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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