ON Semiconductor 55GN01CA-TB-E
Product Information
Transistor Type:
NPN
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
10 V
Maximum Operating Frequency:
5.5 GHz
Maximum Emitter Base Voltage:
3 V
Package Type:
CP
Number of Elements per Chip:
1
Maximum DC Collector Current:
70 mA
Maximum Collector Base Voltage:
20 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
55GN01
Detailed Description:
RF Transistor NPN 10V 70mA 4.5GHz 200mW Surface Mount 3-CP
Noise Figure (dB Typ @ f):
1.9dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
4.5GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
70mA
Customer Reference:
Supplier Device Package:
3-CP
Voltage - Collector Emitter Breakdown (Max):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Gain:
9.5dB
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Manufacturer:
ON Semiconductor
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Yes. We ship 55GN01CA-TB-E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 55GN01CA-TB-E. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.5 x 1.1mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Whereas features a 10 v of collector emitter voltage (max). It carries 5.5 ghz of maximum operating frequency. It features a 3 v of maximum emitter base voltage. The package is a sort of cp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 70 ma. Additionally, it has 20 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: 55gn01. It features rf transistor npn 10v 70ma 4.5ghz 200mw surface mount 3-cp. It has given noise figure of 1.9db @ 1ghz at given frequency. The transition frequency of the product is 4.5ghz. The maximum collector current includes 70ma. 3-cp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 10v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. The 9.5db is the gain value of a bespoke product. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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