Transistor Type:
NPN
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
CPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Collector Base Voltage:
80 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
CPH321
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 1A 420MHz 900mW Surface Mount 3-CPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Transistor Type:
NPN
Frequency - Transition:
420MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
190mV @ 10mA, 500mA
Supplier Device Package:
3-CPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is CPH3216-TL-E. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.6 x 0.9mm. The product is available in surface mount configuration. Provides up to 900 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of cph. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. Additionally, it has 80 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: cph321. It features bipolar (bjt) transistor npn 50v 1a 420mhz 900mw surface mount 3-cph. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 420mhz. The 190mv @ 10ma, 500ma is the maximum Vce saturation. 3-cph is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 900mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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