Toshiba Semiconductor and Storage HN1B04FU-Y,LF
Product Information
Current - Collector (Ic) (Max):
150mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Operating Temperature:
125°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
edacadModel:
HN1B04FU-Y,LF Models
Frequency - Transition:
150MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/8611148
Transistor Type:
NPN, PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
40 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
200mW
Base Product Number:
HN1B04
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search HN1B04FU-Y,LF on website for other similar products.
We accept all major payment methods for all products including ET14928333. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with HN1B04FU-Y,LF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage HN1B04FU-Y,LF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage HN1B04FU-Y,LF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14928333 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14928333.
Yes. We ship HN1B04FU-Y,LF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B04FU-Y,LF. The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. The product has 125°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 250mv @ 10ma, 100ma / 300mv @ 10ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn, pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to hn1b04, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.