Toshiba Semiconductor and Storage HN4A51JTE85LF
Product Information
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
120V
Operating Temperature:
150°C (TJ)
Package / Case:
SC-74A, SOT-753
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
2 PNP (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
28 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SMV
Power - Max:
300mW
Base Product Number:
HN4A51
ECCN:
EAR99
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Yes. We ship HN4A51JTE85LF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4A51JTE85LF. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 120v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74a, sot-753. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 300mv @ 1ma, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 pnp (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 28 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. smv is the supplier device package value. The maximum power of the product is 300mw. Moreover, it corresponds to hn4a51, a base product number of the product. The product is designated with the ear99 code number.
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