Toshiba Semiconductor and Storage MT3S111(TE85L,F)
Product Information
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Noise Figure (dB Typ @ f):
1.2dB @ 1GHz
Frequency - Transition:
11.5GHz
Voltage - Collector Emitter Breakdown (Max):
6V
Gain:
12dB
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
40 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Power - Max:
700mW
Base Product Number:
MT3S111
ECCN:
EAR99
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Yes. Our products in Bipolar RF Transistors category are shipped in lowest possible time.
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Yes. We ship MT3S111(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is MT3S111(TE85L,F). The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 30ma, 5v is the minimum DC current gain at given voltage. It has given noise figure of 1.2db @ 1ghz at given frequency. The transition frequency of the product is 11.5ghz. The maximum collector emitter breakdown voltage of the product is 6v. The 12db is the gain value of a bespoke product. The transistor is a npn type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 700mw. Moreover, it corresponds to mt3s111, a base product number of the product. The product is designated with the ear99 code number.
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