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The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 8 pin configuration. I...
The Renesas evaluation board is designed for evaluating the HIP2211 100V 3A source, 4A sink high-frequency half-bridge driver for driving the gat...
The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 10 pin configuration....
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HIP2211FBZ-T7A, Renesas Technology
The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 8 pin configuration. It features a tri-level PWM input with programmable dead time.
Fast propagation delay and matching with 15ns typical delay and 2ns typical matching
It has Integrated 0.5O typical bootstrap diode
115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
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HIP2211EVAL2Z, Renesas Technology
The Renesas evaluation board is designed for evaluating the HIP2211 100V 3A source, 4A sink high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Also inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
PWM switching frequency up to 100kHz
Popular items
HIP2211FRTZ-T7A, Renesas Technology
The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time.
Fast propagation delay and matching with 15ns typical delay and 2ns typical matching
It has Integrated 0.5O typical bootstrap diode
115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
New Items
New items
HIP2211FBZ-T7A, Renesas Technology
The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 8 pin configuration. It features a tri-level PWM input with programmable dead time.
Fast propagation delay and matching with 15ns typical delay and 2ns typical matching
It has Integrated 0.5O typical bootstrap diode
115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
New items
HIP2211EVAL2Z, Renesas Technology
The Renesas evaluation board is designed for evaluating the HIP2211 100V 3A source, 4A sink high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Also inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
PWM switching frequency up to 100kHz
New items
HIP2211FRTZ-T7A, Renesas Technology
The Renesas 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver belongs to HIP2211 series. This driver has 10 pin configuration. It features a tri-level PWM input with programmable dead time.
Fast propagation delay and matching with 15ns typical delay and 2ns typical matching
It has Integrated 0.5O typical bootstrap diode
115VDC bootstrap supply maximum voltage supports 100V on the half-bridge
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