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Showing Results For: Flash Memory

Flash Memory

Flash memory is a type of solid-state, non-volatile electronic memory storage medium designed to erase and program data and is EEPROM (Electronically Erasable Programmable Read-Only Memory) at the byte level regardless of power source. These storage devices are primarily found in a wide variety of devices such as USB sticks, SD cards, and other specialised industrial uses. The data storage capacity of a flash device is measured in MB or Mbit.

How do they work?

Flash memory integrated circuits store data with or without power by retaining electricity’s small parts between the integral transistors. Memory flash stores its data with no power source, unlike RAM, which loses the data without a power supply. 

What are the types of flash memory devices?

SD flash, micro SD, and compact flash are the common types of flash memory. Of these, memory cards and USB drivers are the most commonly used flash memory devices for various applications.

  • Flash memory cards

These are efficient transferable and removable memory storage devices designed to enhance the desired device’s memory capacity. They come in various dimensions and types. 

  • Flash memory USB Drives

These are external, easily removable devices used in various smart TVs and PCs and plugged into flash memory sticks.

Is there any difference between NOR flash memory and NAND?

  • NOR

The NOR flash memory is more efficient with high-speed data storage capabilities. These memory types are ideal for general-purpose data storage use in various mobile devices that can hold a large number of codes. Furthermore, these flash memories feature a larger memory cell size. However, they are under-ranked than NAND due to their slow write, erase, and scaling capabilities. 

  • NAND

NAND, a short term for “NOT AND”, is a flash memory that offers repeatable erasing and rewriting functions slightly lower than NOR and is ideal for a flash drive for data storage, music, and digital videos. Furthermore, they feature high storage capacity, are cheaper, and are ideal for use in smartphones, cameras, and USB sticks. 

For how long does flash memory store the data?

The data storage time entirely depends on the conditions of use. However, these storage devices cannot store data for long periods of time. So, it is crucial to back up the vital data to other devices, as most of these devices can hold data for ten years on average.

What are the uses of flash memory?

These memory ICs have a wide variety of applications in scientific, smart portable devices, medical, and industrial environments. The following are some of the devices where flash memory is used.

  • Digital cameras
  • Mobile phones
  • PCs and laptops
  • Smart TVs
  • Security systems
  • GPS systems
  • SSD drives
  • Military applications
  • Communications and networking
  • Retail management.

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S25FL128LAGNFM010, Infineon
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S25FL256LAGNFV010, Infineon
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S25FL512SAGBHIA13, Infineon
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S25FL512SAGMFIR10, Infineon
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S25FL128LAGNFV010, Infineon
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S25FL256SAGBHI300, Infineon
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S29GL064S70TFI070, Infineon
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S25FL064LABNFI043, Infineon
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S25FL128LAGMFV013, Infineon
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S25FL256LAGNFI013, Infineon
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S25FL128SAGMFM000, Infineon
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S25FL064P0XMFA000, Infineon
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S25FL127SABMFI100, Infineon
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S25FL064LABMFA001, Cypress Semiconductor

S25FL064LABMFA001, Cypress Semiconductor

The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and providesindividual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,executing code directly (XIP) and storing re-programmable data.
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S25FL256SAGMFIG01, Cypress Semiconductor

S25FL256SAGMFIG01, Cypress Semiconductor

Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Interface) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S70FL01GSAGMFI011, Cypress Semiconductor

S70FL01GSAGMFI011, Cypress Semiconductor

Serial-SPI NOR Flash Memory, Cypress Semiconductor High performance Low pin-count Quad SPI (Serial Peripheral Interface) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S29GL128P11FFI020, Cypress Semiconductor

S29GL128P11FFI020, Cypress Semiconductor

The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
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A25L080M-F, AMIC Technology

A25L080M-F, AMIC Technology

Flash Memory, AMIC Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S29AL008J70TFI013, Cypress Semiconductor

S29AL008J70TFI013, Cypress Semiconductor

The S29AL008J is a 8 Mbit, 3.0 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch) and 48pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. Duringerase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.
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A29L800BUV-70F, AMIC Technology

A29L800BUV-70F, AMIC Technology

Flash Memory, AMIC Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S25FL512SAGBHIA10, Cypress Semiconductor

S25FL512SAGBHIA10, Cypress Semiconductor

This device connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (SingleI/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiplewidth interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock.The Eclipse architecture features a Page Programming Buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,asynchronous, NOR flash memories while reducing signal count dramatically.The S25FL512S product offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP and data storage.
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S25FL128SAGMFI010, Cypress Semiconductor

S25FL128SAGMFI010, Cypress Semiconductor

This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock.The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP and data storage.
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S29GL01GT11FHIV10, Cypress Semiconductor

S29GL01GT11FHIV10, Cypress Semiconductor

53 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O featureWide I/O voltage range (VIO): 1.65 V to VCCx8/x16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in up to a maximum of 512 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128-KB sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 2048-byte One-Time Program (OTP) arrayFour lockable regions (SSR0 - SSR3)SSR0 is Factory LockedSSR3 is Password Read ProtectCommon Flash Interface (CFI) parameter tableTemperature Range / Grade:Industrial (-40 °C to +85 °C)Industrial Plus (-40 °C to +105 °C)Extended (-40 °C to +125 °C)100,000 Program / Erase Cycles20-year data retention፤
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S29GL512S10FHI010, Cypress Semiconductor

S29GL512S10FHI010, Cypress Semiconductor

CMOS 3.0 Volt Core with Versatile I/O65 nm MirrorBit Eclipse TechnologySingle supply (VCC) for read / program / erase (2.7 V to 3.6 V)Versatile I/O FeatureWide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data busAsynchronous 32-byte Page read512-byte Programming BufferProgramming in Page multiples, up to a maximum of 512 bytesSingle word and multiple program on same word optionsAutomatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correctionSector EraseUniform 128Kb sectorsSuspend and Resume commands for Program and Erase operationsStatus Register, Data Polling and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP)Volatile and non-volatile protection methods for each sectorSeparate 1024-byte One Time Program (OTP) array with two lockable regionsCommon Flash Interface (CFI) parameter tableTemperature Range / GradeIndustrial (-40 °C to +85 °C)Industrial Plus(-40 °C to +105 °C)100,000 Program / Erase Cycles20 Years Data RetentionPackaging Options56pin TSOP64-ball LAA Fortified BGA, 13 mm ´ 11 mm64-ball LAE Fortified BGA, 9 mm ´ 9 mm56-ball VBU Fortified BGA, 9 mm ´ 7 mm
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