NVMFD5C668NLT1G Dual N-Channel MOSFET, 68 A, 60 V, 8-Pin DFN ON Semiconductor
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
9.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57.5 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.05mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
6.5 mΩ
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
68 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
8
FET Feature:
Standard
Base Part Number:
NVMFD5
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Input Capacitance (Ciss) (Max) @ Vds:
1440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
21.3nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 50µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 20A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer Standard Lead Time:
17 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
3W (Ta), 57.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
15.5A (Ta), 68A (Tc)
Manufacturer:
ON Semiconductor
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This is Dual N-Channel MOSFET 68 A 60 V 8-Pin DFN manufactured by ON Semiconductor. The manufacturer part number is NVMFD5C668NLT1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 9.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 57.5 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1.05mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 6.5 mω maximum drain source resistance. The package is a sort of dfn. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 68 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The FET features of the product include standard. Base Part Number: nvmfd5. It features mosfet array 2 n-channel (dual) 60v 15.5a (ta), 68a (tc) 3w (ta), 57.5w (tc) surface mount 8-dfn (5x6) dual flag (so8fl-dual). The product's input capacitance at maximum includes 1440pf @ 25v. The maximum gate charge and given voltages include 21.3nc @ 10v. The typical Vgs (th) (max) of the product is 2v @ 50µa. The product has a 60v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6.5mohm @ 20a, 10v. 8-dfn (5x6) dual flag (so8fl-dual) is the supplier device package value. It has typical 17 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 3w (ta), 57.5w (tc). The continuous current drain at 25°C is 15.5a (ta), 68a (tc). The on semiconductor's product offers user-desired applications.
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