Infineon IRFR120ZPBF N-channel MOSFET, 8.7 A, 100 V HEXFET, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
8.7 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
310 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
8.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
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This is N-channel MOSFET 8.7 A 100 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR120ZPBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 8.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 6.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 310 pf@ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 27 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. In addition, it has a typical 8.3 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.
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