This is N-channel MOSFET 17 A 800 V DTMOSIV 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK17A80W,S4X(S. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. It has a maximum of 800 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15mm. Its forward diode voltage is 1.7v . It provides up to 290 mω maximum drain source resistance.
TK17A80W,S4X(S(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is N-channel MOSFET 17 A 800 V DTMOSIV 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK17A80W,S4X(S. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. It has a maximum of 800 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15mm. Its forward diode voltage is 1.7v . It provides up to 290 mω maximum drain source resistance.
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Don’t hesitate to ask questions for better clarification.